发表时间: 2025-04-27 14:46:02
作者: 深圳市美斯迈电子有限公司
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ROSEMONT, Ill, April 22, 2025 -- Littelfuse, Inc. (NASDAQ: LFUS), a diversified, industrial technology manufacturing company empowering a sustainable, connected, and safer world, today announced the release of the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimized for high-frequency power applications, delivering superior switching performance and enhanced design flexibility.
The IXD2012NTR operates over a wide 10 V to 20 V voltage range and supports a high side switch of up to 200 V in a bootstrap operation. Its logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, ensuring seamless integration with a wide range of control devices. With a 1.9 A source and 2.3 A sink output capability, the IXD2012NTR provides robust gate drive currents ideal for high-speed switching applications.
The device's integrated cross-conduction protection logic prevents the high- and low-side outputs from turning on simultaneously, while simplifying circuit design through a high level of integration. Offered in a compact SOIC(N)-8 package and operational over a temperature range of −40 °C to +125 °C, the IXD2012NTR delivers reliable performance even in harsh environments.
Key Features and Benefits
“The IXD2012NTR is a direct drop-in replacement to popular, industry-standard gate driver devices,' said June Zhang, Product Manager, Integrated Circuits Division of Littelfuse Semiconductor Business Unit. 'This addition to our portfolio provides customers with a reliable, alternate source to meet demanding production schedules while delivering exceptional high-speed performance.”
Ideal for Diverse Markets and Applications
The IXD2012NTR enhances the Littelfuse portfolio of high- and low-side gate drivers by offering a new 200 V device. It supports various high-frequency applications, including:
The IXD2012NTR is well-suited for use in several markets:
